Schottky diodes and field-effect transistors based on conjugated thiophenes

Materials Science and Engineering C

Volumn 5, Issue 3-4, 1998, Pages 233-236

  Torsi, L ^a,b   Malitesta, C ^a   Sabbatini, L ^a   Zambonin, P G ^a   Dodabalapur, A ^b   Katz, H E ^b  

^a UNIVERSITY OF BARI   (Italy)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

Conjugated thiophenes; Field effect transistors; Schottky diodes

Indexed keywords

ANNEALING; COST EFFECTIVENESS; FIELD EFFECT TRANSISTORS; GLASS; OLIGOMERS; PLASTICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; THERMAL EFFECTS; THIN FILM TRANSISTORS; THIN FILMS; TRANSPORT PROPERTIES;

CONJUGATED THIOPHENE; FLEXIBILITY; LOW WEIGHT; POLYBITHIOPHENE;

THIN FILM DEVICES;

EID: 0011762627     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(97)00049-0     Document Type: Article

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