Electrical and structural properties of refractory metal Mo/poly(3-methylthiophene) Schottky barrier diodes

Synthetic Metals

Volumn 87, Issue 2, 1997, Pages 109-113

  Tagmouti, S ^a   Oueriagli, A ^a   Outzourhit, A ^a   Khaidar, M ^a   Ameziane, El L ^a   Yassar, A ^b   Youssoufi, H K ^b   Garnier, F ^b  

^a FACULTÉ DES SCIENCES SEMLALIA   (Morocco)

^b CNRS   (France)

Author keywords

Electrodeposition; Poly(3 methylthiophene); Schottky barrier

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRODEPOSITION; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; HETEROJUNCTIONS; MOLYBDENUM; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

GRAZING INCIDENCE X RAY DIFFRACTION (GIXD); POLYMETHYLTHIOPHENE;

SCHOTTKY BARRIER DIODES;

EID: 0031098210     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(96)04692-9     Document Type: Article

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