Field emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond films by ion implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 603-607

  Cho, Euo Sik ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a   Kwon, Sang Jik ^b  

^a Seoul National University   (South Korea)

^b Gachon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON EMISSION; FILM GROWTH; ION IMPLANTATION; MICROWAVES; PHOSPHORUS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY;

DIAMOND GROWTH; FIELD EMISSION PROPERTIES; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE DIAMOND FILMS;

DIAMOND FILMS;

EID: 0037207778     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1531170     Document Type: Article

References (16)

1. J. D. Lee, E. S. Cho, and S. J. Kwon, J. Vac. Sci. Technol. B 19, 954 (2001).
2. C. G. Lee, B. G. Park, and J. D. Lee, IEEE Electron Device Lett. 17, 115 (1996).
3. H. S. Uh, S. J. Kwon, and J. D. Lee, IEEE Electron Device Lett. 16, 488 (1995).
4. H. S. Uh, S. J. Kown, and J. D. Lee, J. Vac. Sci. Technol. B 15, 472 (1997).
5. J. Kwon, Y. H. Shin, D. M. Aslam, and J. D. Lee, J. Vac. Sci. Technol. B 16, 712 (1998).
6. W. Zhu, G. P. Kochanski, S. Jin, and L. Seibles, J. Appl. Phys. 78, 2707 (1995).
7. N. S. Xu, Y. Tzeng, and R. V. Latham, J. Phys. D 26, 1776 (1993).
8. N. Schauer, J. R. Flemish, R. Wittstruck, M. I. Landstrass, and M. A. Plano, Appl. Phys. Lett. 64, 1094 (1994).
9. G. Z. Cao, F. A. J. Driessen, G. J. Bauhuis, and L. J. Giling, J. Appl. Phys. 78, 3125 (1995).
10. C. Kimura, S. Koizumi, M. Kamo, and T. Sugino, J. Vac. Sci. Technol. B 18, 1024 (2000).
11. H. Hofsass, M. Dalmer, M. Restle, and C. Ronning, J. Appl. Phys. 81, 2566 (1997).
12. L. S. Pan and D. R. Kania, Diamond: Electronic Properties and Applications (Kumber, 1995).
13. S. A. Kajihara, A. Antonelli, J. Bernholc, and R. Car, Phys. Rev. Lett. 16, 2010 (1991).
14. J. F. Prins, T. E. Derry, and J. P. F. Sellschop, Phys. Rev. B 34, 8870 (1986).
15. M. W. Geis, J. C. Twichell, and T. M. Lyszzczarz, J. Vac. Sci. Technol. B 14, 2060 (1996).
16. Y. Gotoh, T. Kondo, M. Nagao, H. Tsuji, J. Ishikawa, K. Hayashi, and K. Kobashi, J. Vac. Sci. Technol. B 18, 1018 (2000).