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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 1024-1026

Electron emission process of phosphorus-doped homoepitaxial diamond films

(4) Kimura, Chiharu a Koizumi, Satoshi a,b Kamo, Mutsukazu a,b Sugino, Takashi a

a OSAKA UNIVERSITY (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ANODES; COMPOSITION EFFECTS; DIAMOND FILMS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; EPITAXIAL GROWTH; PHOSPHORUS; REACTION KINETICS;

ELECTRON INJECTION; HOMOEPITAXIAL FILMS;

FIELD EMISSION CATHODES;

EID: 0034156116 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.591319 Document Type: Article

Times cited : (7)

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