A new fabrication process of field emitter arrays with submicron gate apertures using local oxidation of silicon

IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 115-117

  Lee, Chun Gyoo ^b   Park, Byung Gook ^a,b   Lee, Jong Duk ^a,b  

^a IEEE

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC INSULATORS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); MASKS; OXIDATION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SILICON WAFERS;

FIELD EMITTER ARRAYS; GATE CURRENT; GATE HOLE SIZE; GATE INSULATOR; LOCAL OXIDATION OF SILICON; SPINDT PROCESS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030105524     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485185     Document Type: Article

References (6)

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2. C. A. Spindt, C. E. Holland, A. Rosengreen, and Ivor Brodie, "Fieldemitter arrays for vaccum microelectronics,"IEEE Trans. Electron Devices, vol. 38, no. 10, pp. 2355-2363, 1991.
3. C. O. Bozler, Christopher T. Harris, Steven Rabe, Dennis D. Rathman, Mark A. Hollis, and Henry I. Smith, "Arrays of gated field-emitter cones having 0.32 μm tip-to-tip spacing,"J. Vac. Sci. Technol. B, vol. 12, no. 2, p. 629, 1994.
4. S. Wolf, Silicon Processing for the VLSI Era Volume 2-Process Integration. Sunset Beach: Lattice Press, 1990.
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6. H. Y. Ahn, C. G. Lee, and J. D. Lee, "Numerical analysis of the electric field and current for a Spindt-type emitter," J. Korean Phys. Soc., vol. 27, p. 200, 1994.