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Volumn 21, Issue 1 SPEC., 2003, Pages 168-173
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Microstructure and crystallinity of porous silicon and epitaxial silicon layers fabricated on p+ porous silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTAL MICROSTRUCTURE;
EPITAXIAL GROWTH;
EVAPORATION;
POROSITY;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING SILICON;
SILICON ON INSULATOR TECHNOLOGY;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
CRYSTALLINITY;
ELECTROCHEMICAL ANODIZATION;
ULTRAHIGH VACUUM ELECTRON EVAPORATION;
POROUS SILICON;
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EID: 0037207706
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1537714 Document Type: Article |
Times cited : (17)
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References (21)
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