Fabrication of subwavelength-size aperture for a near-field optical probe using various microfabrication procedures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 118-122

  Choi, S S ^a   Jung, M Y ^a   Kim, D W ^a   Kim, J W ^b   Boo, J H ^b  

^a SunMoon University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DRY ETCHING; MASKS; NANOTECHNOLOGY; OPTICAL SENSORS; OXIDATION; PHOTOLITHOGRAPHY; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SOLUTIONS;

ANISOTROPIC ETCHING; ISOTROPIC OXIDE ETCHING; MICROFABRICATION; NEAR FIELD OPTICAL PROBE; SILICON OXIDE; SUBWAVELENGTH SIZE APERTURES; WET ETCHING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0037207696     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1534574     Document Type: Article

References (17)

1. R. C. Davis, C. C. Williams, and P. Neuzil, Appl. Phys. Lett. 66, 2309 (1995).
2. A. G. T. Ruiter, M. H. P. Moers, N. F. van Hulst, and M. de Boer, J. Vac. Sci. Technol. B 14, 597 (1996).
3. C. Mihalcea, W. Scholz, S. Werner, S. Munster, E. Oesterschulze, and R. Kassing, Appl. Phys. Lett. 68, 3531 (1996).
4. A. Partovi, D. Peale, M. Wuttig, C. A. Murray, G. Zydzik, L. Hopkins, K. Baldwin, W. S. Hopson, J. Wynn, J. Lopata, L. Dhar, R. Chichester, and J. H. Yeh, Appl. Phys. Lett. 75, 1515 (1999).
5. Y. Martin, S. Rishton, and H. K. Wickramasinghe, Appl. Phys. Lett. 71, 1 (1997).
6. E. Betzig, J. K. Trautman, R. Wolfe, E. M. Gyory, P. L. Finn, M. H. Kryder, and C. H. Chang, Appl. Phys. Lett. 61, 142 (1992).
7. H. J. Mamin, B. D. Terris, L. S. Fan, S. Hoen, R. C. Barret, and D. Rugar, IBM J. Res. Dev. 39, 681 (1995).
8. P. Vettiger, M. Despont, V. Dreschler, U. Duerig, W. Haeberle, M. I. Lutwyche, H. E. Rothuize, R. Stutz, R. Widmer, and G. K. Binnig, IBM J. Res. Dev. 44, 323 (2000).
9. Y. Mitsuhashi, Jpn. J. Appl. Phys., Part 1 37, 2079 (1998).
10. M. Y. Jung, I. W. Lyo, D. W. Kim, and S. S. Choi, J. Vac. Sci. Technol. A 18, 1333 (2000).
11. H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgartel, J. Electrochem. Soc. 137, 3612 (1990).
12. G. T. A. Kovacs, N. I. Maluf, and K. E. Peterson, Proc. IEEE 86, 1536 (1998).
13. M. Y. Jung, J. W. Lee, D. W. Kim, and S. S. Choi, Proceedings of the European Surface Science Meeting, Madrid, Spain, 6-9 September 2000.
14. D. B. Kao, J. P. McVittie, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices ED-35, 25 (1988).
15. D. B. Kao, J. P. McVitte, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices ED-34, 1008 (1987).
16. H. L. Liu, D. K. Biegelson, F. A. Ponse, N. M. Johnson, and R. F. W. Pease, Appl. Phys. Lett. 64, 1383 (1994).
17. H. F. Winters and J. W. Coburn, J. Vac. Sci. Technol. B 3, 1376 (1985).