-
1
-
-
0021899840
-
Advances in dry etching process—a review
-
S J, Fonash, Advances in dry etching process—a review, Solid State Technology, vol 28, p 150, Jan 1985.
-
(1985)
Solid State Technology
, vol.28
, pp. 150
-
-
Fonash, S.J.1
-
2
-
-
0019049136
-
1-μm MOS Process using Anisotropic Dry Etching
-
N, Endo & Y, Kurogi, 1-μm MOS Process using Anisotropic Dry Etching, IEEE Trans Electron Devices, vol ED-27, p 1346, August 1980.
-
(1980)
IEEE Trans Electron Devices
, vol.ED-27
, pp. 1346
-
-
Endo, N.1
Kurogi, Y.2
-
3
-
-
0001298784
-
Dry etching for pattern transfer
-
H W, Lehmann & R, Widmer, Dry etching for pattern transfer, J Vac Sci Technol, vol 17, p 1177, Sept/Oct 1980.
-
(1980)
J Vac Sci Technol
, vol.17
, pp. 1177
-
-
Lehmann, H.W.1
Widmer, R.2
-
4
-
-
0016994185
-
Dry process technology (reactive ion etching)
-
J A, Bonder, Dry process technology (reactive ion etching), J Vac Sci Technol, vol 13, p 1023, 1976.
-
(1976)
J Vac Sci Technol
, vol.13
, pp. 1023
-
-
Bonder, J.A.1
-
5
-
-
0016993284
-
Introduction to ion and plasma etching
-
S, Somesh, Introduction to ion and plasma etching, J Vac Sci Technol, vol 13, p 1003, 1976.
-
(1976)
J Vac Sci Technol
, vol.13
, pp. 1003
-
-
Somesh, S.1
-
6
-
-
0016994702
-
Ion etching for pattern delineation
-
C M, Melliar-Smith, Ion etching for pattern delineation, J Vac Sci Technol, vol 13, p 1008, 1976.
-
(1976)
J Vac Sci Technol
, vol.13
, pp. 1008
-
-
Melliar-Smith, C.M.1
-
7
-
-
0019633428
-
Reactive Ion Etching for VLSI
-
L M, Ephrath, Reactive Ion Etching for VLSI, IEEE Trans Electron Devices, vol ED-28, p 1315, November 1981.
-
(1981)
IEEE Trans Electron Devices
, vol.ED-28
, pp. 1315
-
-
Ephrath, L.M.1
-
8
-
-
0001041427
-
Reactive ion etching for microelectrical mechanical system fabrication
-
I W, Rangelow & H, Loschner, Reactive ion etching for microelectrical mechanical system fabrication, J Vac Sci Technol, vol B 13, no 6, p 2394, Nov/Dec 1995.
-
(1995)
J Vac Sci Technol
, vol.B 13
, Issue.6
, pp. 2394
-
-
Rangelow, I.W.1
Loschner, H.2
-
9
-
-
0031074309
-
Fabrication of High Aspect Ratio Structures using Chlorine Gas Chopping Technique
-
A K, Paul & I W, Rangelow, Fabrication of High Aspect Ratio Structures using Chlorine Gas Chopping Technique, Microelectronic Engineering, vol 35, no 1-4, pp 79–82, February 1997.
-
(1997)
Microelectronic Engineering
, vol.35
, Issue.1-4
, pp. 79-82
-
-
Paul, A.K.1
Rangelow, I.W.2
-
10
-
-
0014761931
-
Application of RF Discharges to Sputtering
-
HR, Koenig & L I, Meissel, Application of RF Discharges to Sputtering, IBM J Res Dev, vol 14, pp 168–171, March 1970.
-
(1970)
IBM J Res Dev
, vol.14
, pp. 168-171
-
-
Koenig, H.R.1
Meissel, L.I.2
-
11
-
-
0017946145
-
Flow rate effects in plasma etching
-
B N, Chapman & V J, Minkiewicz, Flow rate effects in plasma etching, J Vac Sci Technol, vol 15, no 2, p 329, March/April 1978.
-
(1978)
J Vac Sci Technol
, vol.15
, Issue.2
, pp. 329
-
-
Chapman, B.N.1
Minkiewicz, V.J.2
-
12
-
-
0000243251
-
-
Clansing R.E., Horton L.L., Angus J.C., Koidl P., (eds), New York: Plenum Press
-
T, Catherine, Diamond and Diamond-like Films and Coatings, NATO-ASI Series B:Physics, R E, Clansing, L L, Horton, J C, Angus & P, Koidl, (eds), vol 266, p-193, New York, Plenum Press, 1991.
-
(1991)
Diamond and Diamond-like Films and Coatings, NATO-ASI Series B: Physics
, vol.266
, pp. 193
-
-
Catherine, T.1
-
15
-
-
11344252365
-
Reactive Ion Etching Process
-
IIT, Kanpur
-
A K, Paul, A K, Dimri, P C, Banerjie, Reactive Ion Etching Process, Proceeding of the National Symposium on Plasma Science, 8–10 November, 1995, IIT, Kanpur.
-
(1995)
Proceeding of the National Symposium on Plasma Science
, pp. 8-10
-
-
Paul, A.K.1
Dimri, A.K.2
Banerjie, P.C.3
|