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Volumn 15, Issue 1-2, 1998, Pages 49-54

Reactive ion etching (RIE) system design and its characterisation

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; SEMICONDUCTING SILICON;

EID: 0031598951     PISSN: 02564602     EISSN: 09745971     Source Type: Journal    
DOI: 10.1080/02564602.1998.11416728     Document Type: Article
Times cited : (4)

References (15)
  • 1
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    • Fonash, S.J.1
  • 2
    • 0019049136 scopus 로고
    • 1-μm MOS Process using Anisotropic Dry Etching
    • N, Endo & Y, Kurogi, 1-μm MOS Process using Anisotropic Dry Etching, IEEE Trans Electron Devices, vol ED-27, p 1346, August 1980.
    • (1980) IEEE Trans Electron Devices , vol.ED-27 , pp. 1346
    • Endo, N.1    Kurogi, Y.2
  • 3
    • 0001298784 scopus 로고
    • Dry etching for pattern transfer
    • H W, Lehmann & R, Widmer, Dry etching for pattern transfer, J Vac Sci Technol, vol 17, p 1177, Sept/Oct 1980.
    • (1980) J Vac Sci Technol , vol.17 , pp. 1177
    • Lehmann, H.W.1    Widmer, R.2
  • 4
    • 0016994185 scopus 로고
    • Dry process technology (reactive ion etching)
    • J A, Bonder, Dry process technology (reactive ion etching), J Vac Sci Technol, vol 13, p 1023, 1976.
    • (1976) J Vac Sci Technol , vol.13 , pp. 1023
    • Bonder, J.A.1
  • 5
    • 0016993284 scopus 로고
    • Introduction to ion and plasma etching
    • S, Somesh, Introduction to ion and plasma etching, J Vac Sci Technol, vol 13, p 1003, 1976.
    • (1976) J Vac Sci Technol , vol.13 , pp. 1003
    • Somesh, S.1
  • 6
    • 0016994702 scopus 로고
    • Ion etching for pattern delineation
    • C M, Melliar-Smith, Ion etching for pattern delineation, J Vac Sci Technol, vol 13, p 1008, 1976.
    • (1976) J Vac Sci Technol , vol.13 , pp. 1008
    • Melliar-Smith, C.M.1
  • 7
    • 0019633428 scopus 로고
    • Reactive Ion Etching for VLSI
    • L M, Ephrath, Reactive Ion Etching for VLSI, IEEE Trans Electron Devices, vol ED-28, p 1315, November 1981.
    • (1981) IEEE Trans Electron Devices , vol.ED-28 , pp. 1315
    • Ephrath, L.M.1
  • 8
    • 0001041427 scopus 로고
    • Reactive ion etching for microelectrical mechanical system fabrication
    • I W, Rangelow & H, Loschner, Reactive ion etching for microelectrical mechanical system fabrication, J Vac Sci Technol, vol B 13, no 6, p 2394, Nov/Dec 1995.
    • (1995) J Vac Sci Technol , vol.B 13 , Issue.6 , pp. 2394
    • Rangelow, I.W.1    Loschner, H.2
  • 9
    • 0031074309 scopus 로고    scopus 로고
    • Fabrication of High Aspect Ratio Structures using Chlorine Gas Chopping Technique
    • A K, Paul & I W, Rangelow, Fabrication of High Aspect Ratio Structures using Chlorine Gas Chopping Technique, Microelectronic Engineering, vol 35, no 1-4, pp 79–82, February 1997.
    • (1997) Microelectronic Engineering , vol.35 , Issue.1-4 , pp. 79-82
    • Paul, A.K.1    Rangelow, I.W.2
  • 10
    • 0014761931 scopus 로고
    • Application of RF Discharges to Sputtering
    • HR, Koenig & L I, Meissel, Application of RF Discharges to Sputtering, IBM J Res Dev, vol 14, pp 168–171, March 1970.
    • (1970) IBM J Res Dev , vol.14 , pp. 168-171
    • Koenig, H.R.1    Meissel, L.I.2
  • 11
    • 0017946145 scopus 로고
    • Flow rate effects in plasma etching
    • B N, Chapman & V J, Minkiewicz, Flow rate effects in plasma etching, J Vac Sci Technol, vol 15, no 2, p 329, March/April 1978.
    • (1978) J Vac Sci Technol , vol.15 , Issue.2 , pp. 329
    • Chapman, B.N.1    Minkiewicz, V.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.