Surface compositional changes in GaAs subjected to argon plasma treatment

Applied Surface Science

Volumn 202, Issue 3-4, 2002, Pages 183-198

  Surdu Bob, C C ^a   Sullivan, J L ^a   Saied, S O ^a   Layberry, R ^a   Aflori, M ^b  

^a ASTON UNIVERSITY   (United Kingdom)

^b ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

Author keywords

Argon plasma; Etching; GaAs

Indexed keywords

ARGON; OXIDATION; PLASMAS; REACTIVE ION ETCHING; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

ARGON PLASMA TREATMENT;

SURFACE STRUCTURE;

EID: 0037203056     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00922-4     Document Type: Article

References (23)

1. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, 2nd ed., New York, Pergamon, 1985.
2. Kuen-Sane D., Rong-Yih H. Materials science and engineering B - solid state materials for advanced technology B. 9(1-3):1991;57.
3. Singer I.L., Murday J.S., Comas J. J. Vac. Sci. Technol. 18(2):1981;161.
4. Malherbe J.B., Barnard W.O., Strydom I., Louw C.W. Surf. Interf. Anal. 18:1992;491.
5. Scandurra A., Licciardello A., Torrisi A. Appl. Surf. Sci. 103:1996;19.
6. Sullivan J.L., Yu W., Saied S.O. Appl. Surf. Sci. 90:1995;309.
7. Aoyama T., Tanemura M., Okuyama F. Appl. Surf. Sci. 100/101:1995;351-354.
8. Wolan J.T., Mont C.K., Hoflund G.B. Appl. Phys. Lett. 72:1998;1469.
9. Ching-Hui C., Green D.L., Hu E.L. J. Vac. Sci. Technol. B. 13(6):1995;2355.
10. Pan J.S., Wee A.T.S., Huan C.H.A., Tan H.S., Tan K.L. J. of Phys. D: Appl. Phys. 30:1997;2514.
11. Y. Wei, Ion Bombardment Induced Compositional Changes in Compound Semiconductor Surfaces Studied by XPS Combined with LEISS, Ph.D., Aston University, UK, 1995.
12. Rauf S., Kushner M.J. J. Appl. Phys. 82(6):1997;2805.
13. Godyak V.A., Piejak R.B., Sternberg N. IEEE Trans. Plasma Sci. 21(4):1993;378.
14. Lai C., Breun R.A., Sandstrom P.W., Wendt A.E., Hershkowitz N., Woods R.C. J. Vac. Sci. Technol. A. 11(4):1993;1199.
15. Surdu-Bob C.C., Saied S.O., Sullivan J.L. Appl. Surf. Sci. 183:2001;126.
16. D. Briggs, M.P. Seah, Practical Surf. Analysis, 2nd ed., Wiley, Chichester, 1990.
17. R.L. Layberry, Computer Simulation of Radio-Frequency Methane/Hydrogen Plasmas and their Interaction with GaAs Surfaces, Ph.D., Aston University, UK, 1999.
18. Chester M.J., Jach T. J. Vac. Sci. Technol. B. 11(4):1993;1609-1613.
19. Malherbe J.B. Sputtering of compound semiconductor surfaces. Part 1. Ion-solid interaction and sputtering yields. Critical Rev. Solid State Mater. Sci. 19(2):1994;55-127.
20. M. Kaminsky, Washington, DC, American Chemical Society, 1976.
21. T. Choudhury, Ph.D., Aston University, UK, 1991.
22. I.A. Russu, Ph.D. A.I. Cuza University, Romania, 2001.
23. Pan J.S., Wee A.T.S., Huan C.H.A., Tan H.S., Tan K.L. J. Phys. D: Appl. Phys. 30:1997;2514-2519.