SNMS characterization of ion irradiated GaAs surfaces

Applied Surface Science

Volumn 103, Issue 1, 1996, Pages 19-25

  Scandurra, A ^a,c   Licciardello, A ^b   Torrisi, A ^b   Weigert, R ^b   Puglisi, O ^b  

^a Consorzio Catania Ricerche ^*  (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; COMPOSITION EFFECTS; ION BOMBARDMENT; MASS SPECTROMETRY; SPUTTERING; SURFACE STRUCTURE;

SPUTTERED NEUTRAL MASS SPECTROMETRY; SPUTTERED NEUTRAL YIELDS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030246559     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00468-0     Document Type: Article

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