Evaluation of electron trap levels in SOI buried oxides by transient photocurrent spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1274-1277

  Miura, Yoshinao ^a   Hamada, Kouichi ^a   Kitano, Tomohisa ^a   Ogura, Atsushi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Buried oxide; Capture cross section; Electron trap; Positively charged center; SIMOX; Transient photocurrent spectroscopy; Trap level

Indexed keywords

EID: 0001028473     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1274     Document Type: Review

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