Room-temperature 1.54-μm electroluminescence from Er-doped Si-rich SiO2 films deposited on p-Si by magnetron sputtering

Thin Solid Films

Volumn 409, Issue 2, 2002, Pages 194-197

  Yuan, F C ^a,b   Ran, G Z ^a   Chen, Y ^a   Dai, L ^a   Qiao, Y P ^a   Ma, Z C ^c   Zong, W H ^c   Qin, G G ^a  

^a PEKING UNIVERSITY   (China)

^b Quanzhou Teacher's College   (China)

^c HSRI   (China)

Author keywords

Luminescence; Nanostructures; Silicon oxide; Sputtering

Indexed keywords

ANNEALING; ELECTROLUMINESCENCE; ERBIUM; LIGHT EMITTING DIODES; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING; SILICA; SUBSTRATES; THERMAL EFFECTS;

ANNEALING TEMPERATURE;

SEMICONDUCTING FILMS;

EID: 0037197361     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00069-X     Document Type: Article

References (17)