A spectroscopic study on the luminescence of Er in porous silicon

Applied Physics Letters

Volumn 68, Issue 14, 1996, Pages 1951-1953

  Hömmerich, Uwe ^a   Namavar, Fereydoon ^b   Cremins, Annmarie ^b   Bray, Kevin L ^c  

^a HAMPTON UNIVERSITY   (United States)

^b SPIRE CORPORATION   (United States)

^c University of Wisconsin Madison ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ERBIUM; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROUS SILICON; THERMAL EFFECTS;

BAND TO BAND RECOMBINATION; PHOTOLUMINESCENCE EXCITATION;

EMISSION SPECTROSCOPY;

EID: 0030127816     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115636     Document Type: Article

References (15)

1. G. S. Pomrenke, P. B. Klein, and D. W. Langer, Rare Earth Doped Semiconductors (Materials Research Society, Pittsburg, PA, 1993), Vol. 301.
2. S. Coffa, F. Priolo, G. Franzó, V. Bellani, A. Carnera, and C. Spinella, Phys. Rev. B 48, 11782 (1993).
3. D. L. Adler, D. C. Jacobsen, D. J. Eaglesham, M. A. Marcus, J. L. Benton, J. M. Poate, and P. H. Citrin, Appl. Phys. Lett. 61, 1281 (1992).
4. B. Zheng, J. Michel, F. Y. G. Ren, L. C. Kimerling, D. C. Jacobsen, and J. M. Poate, Appl. Phys. Lett. 64, 2842 (1994).
5. F. Namavar, III-V Rev. 7, 10 (1994), and presented at Rare Earth Doped Optoelectronic Materials Workshop, Malibu, CA, June 16, 1994; F. Namavar, F. Lu, C. H. Perry, A. Cremins, N. M. Kalkhoran, and R. A. Soref, Mater. Res. Soc. Symp. Proc. 358, 375 (1995).
6. F. Namavar, F. Lu, C. H. Perry, A. Cremins, N. M. Kalkhoran, and R. A. Soref, J. Appl. Phys. 77, 4813 (1995).
7. J. H. Shin, G. N. van den Hoven, and A. Polman, Appl. Phys. Lett. 66, 2379 (1995).
8. T. Kimura, A. Yokoi, H. Horiguchi, R. Saito, T. Ikoma, and A. Sato, Appl. Phys. Lett. 65, 983 (1994).
9. A. M. Dorofeev, N. V. Gaponenko, V. P. Bondarenko, E. E. Bachilo, N. M. Kazuchits, A. A. Leshok, G. N. Troyanova, N. N. Vorosov, V. E. Borisenko, H. Gnaser, W. Bock, P. Becker, and H. Oechsner, J. Appl. Phys. 77, 2679 (1995).
10. F. Namavar, F. Lu, C. H. Perry, A. Cremins, N. M. Kalkhoran, and R. Soref, J. Electronic Materials, December 1995 (in press).
11. P. N. Favennec, H. L'Hardon, D. Moutonnet, M. Salvi, and M. Gauneau, Mater. Res. Soc. Symp. Proc. 301, 181 (1993).
12. C. H. Perry, F. Lu, F. Namavar, N. M. Kalkhoran, and R. A. Soref, Mater. Res. Soc. Symp. Proc. 256, 153 (1992).
13. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
14. J. L. Benton, D. J. Eaglesham, M. Almonte, P. H. Citrin, M. A. Marcus, D. L. Adler, D. C. Jacobsen, and J. M. Poate, Mater. Res. Soc. Symp. Proc. 301, 181 (1993).
15. T. Benyattou, D. Seghier, G. Guillot, R. Moncorge, P. Galtier, and M. N. Charasse, Mater. Res. Soc. Symp. Proc. 163, 69 (1990).