Compositional characterization of silicon nitride thin films prepared by RF-sputtering

Vacuum

Volumn 67, Issue 3-4, 2002, Pages 513-518

  Vila, M ^a   Martin Gago J A ^a   Munoz Martin A ^a   Prieto, C ^a   Miranzo, P ^b   Osendi, M I ^b   Garcia Lopez J ^c   Respaldiza, M A ^c  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b INSTITUTO DE CERÁMICA Y VIDRIO   (Spain)

^c CENTRO NACIONAL DE ACELERADORES   (Spain)

Author keywords

Reactive sputtering; Silicon nitride thin films stoichiometry

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE; SPUTTER DEPOSITION; STOICHIOMETRY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

REACTIVE SPUTTERING;

THIN FILMS;

EID: 0037179736     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00221-X     Document Type: Conference Paper

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