Linearity of high Al-content AlGaN/GaN HEMTs

Annual Device Research Conference Digest

Volumn , Issue , 2001, Pages 201-202

  Jenkins, T ^a   Kehias, L ^a   Parikh, P ^a   Wu, Y F ^a   Chavarkar, P ^a   Moore, M ^a   Mishra, U ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POWER MEASUREMENT; GALLIUM NITRIDE; MODULATION; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS; TRANSCEIVERS;

SEMICONDUCTOR DEVICE LINEARITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034860353     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. High Al-content AlGaN/GaN HEMTs on SiC substrates with very-high power performance
2. High Al-content AlGaN/GaN MODFETs for ultra-high performance