Ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layer by liquid-delivery metalorganic chemical vapor deposition

Thin Solid Films

Volumn 409, Issue 1, 2002, Pages 133-137

  Shin, W C ^a   Choi, K J ^a   Yoon, S G ^a  

^a Chungnam National University   (South Korea)

Author keywords

Bi2O3 buffer layer; Ferroelectric properties; Liquid delivery; Liquid delivery MOCVD; SrBi2Ta2O9

Indexed keywords

ANNEALING; DEPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; SEMICONDUCTING BISMUTH COMPOUNDS; STRONTIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

BUFFER LAYERS;

FERROELECTRIC THIN FILMS;

EID: 0037156087     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00116-5     Document Type: Conference Paper

References (13)