Macro-pyramid in GaN film

Chinese Physics Letters

Volumn 18, Issue 2, 2001, Pages 260-262

  Zhou, Jing ^a   Yang, Zhi Jian ^a   Xu, Shi Fa ^a   Zhu, Xing ^a   Zhang, Guo Yi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; FILM THICKNESS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; THIN FILMS;

ATOMIC-FORCE-MICROSCOPY; CHEMICAL VAPOR; EPITAXY SYSTEMS; GAN FILM; GAN MATERIAL; HALIDE VAPOR PHASE EPITAXY; METALORGANICS; SIMPLE MODELING; STEP-HEIGHT; THIN-FILMS;

III-V SEMICONDUCTORS;

EID: 0035626498     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/2/336     Document Type: Article

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