Annealing of irradiated silicon strip detectors for the ATLAS experiment at CERN

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 426, Issue 2, 1999, Pages 366-374

  Morgan, D ^a   Riedler, P ^b   Allport, P P ^c   Buttar, C M ^a   Carter, J R ^d   Robinson, D ^d   Roe, S ^b   Rohe, T ^e   Sadrozinski, H F W ^h   Stapnes, S ^f   Unno, Y ^g   Weilhammer, P ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b CERN   (Switzerland)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

^f UNIVERSITY OF OSLO   (Norway)

^g HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^h NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; PARTICLE BEAM TRACKING; PROTON IRRADIATION; RADIATION DAMAGE; SILICON SENSORS; THERMAL EFFECTS;

SEMICONDUCTOR TRACKERS; SILICON STRIP DETECTORS;

PARTICLE DETECTORS;

EID: 0033132618     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00025-X     Document Type: Article

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