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Volumn 194, Issue 1-4, 2002, Pages 101-105

Density gradient in SiO 2 films on silicon as revealed by positron annihilation spectroscopy

Author keywords

Positron annihilation; Si SiO 2 structures

Indexed keywords

CRYSTAL GROWTH; DEPOSITION; ETCHING; INTERFACES (MATERIALS); OXIDATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; QUARTZ; SILICON;

EID: 0037150995     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00096-X     Document Type: Conference Paper
Times cited : (12)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.