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Volumn 194, Issue 1-4, 2002, Pages 101-105
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Density gradient in SiO 2 films on silicon as revealed by positron annihilation spectroscopy
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Author keywords
Positron annihilation; Si SiO 2 structures
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Indexed keywords
CRYSTAL GROWTH;
DEPOSITION;
ETCHING;
INTERFACES (MATERIALS);
OXIDATION;
POSITRON ANNIHILATION SPECTROSCOPY;
POSITRONS;
QUARTZ;
SILICON;
POSITRON ANNIHILATIONS;
SEMICONDUCTING FILMS;
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EID: 0037150995
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(02)00096-X Document Type: Conference Paper |
Times cited : (12)
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References (16)
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