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Volumn 9, Issue 14, 1997, Pages 2947-2954

Investigation of the transition region between SiO2 layers wet grown at 700 °C and Si

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001470211     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/9/14/009     Document Type: Article
Times cited : (5)

References (17)
  • 1
    • 0002742893 scopus 로고
    • ed S M Sze (New York: McGraw-Hill)
    • Katz L E 1988 VLSI Technology ed S M Sze (New York: McGraw-Hill) p 98
    • (1988) VLSI Technology , pp. 98
    • Katz, L.E.1
  • 8
    • 4043054234 scopus 로고    scopus 로고
    • Dissertation HMI-B 535, Fachbereich Elektrotechnik der TU Berlin
    • Krauser J 1996 Dissertation HMI-B 535, Fachbereich Elektrotechnik der TU Berlin
    • (1996)
    • Krauser, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.