C-V and DLTS characterization of rapid thermal oxides on Si0.887Ge0.113 and Si0.8811Ge0.113C0.0059 alloys

International Journal of Modern Physics B

Volumn 16, Issue 28-29, 2002, Pages 4207-4210

  Feng, W ^a   Choi, W K ^a   Bera, L K ^a   Mi, J ^b   Yang, C Y ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SANTA CLARA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; GERMANIUM; OXIDE; SILICON;

CONFERENCE PAPER; DOPING; OXIDATION; SAMPLING; SPECTROSCOPY; TEMPERATURE DEPENDENCE; THERMAL ANALYSIS; VELOCITY;

EID: 0037146303     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217979202015091     Document Type: Conference Paper

References (5)

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2. L.K. Bera, W.K. Choi, W. Feng, et al., Appl. Phys. Lett. 77, 256 (2000).
3. C.G. Ahn, H.S. Kang, Y.K. Kwon, et al., J. Appl. Phys. 86, 1542 (2000).
4. J. Mi, A. Gupta, C.Y. Yang, et al., Appl. Phys. Lett. 69, 3743 (1996).
5. W.K. Choi, W. Feng, L.K. Beta, et al., J. Appl. Phys. 90, 5819 (2001).