The transition to step flow growth on the clean and surfactant covered Si(111) surface studied by in-situ leem

International Journal of Modern Physics B

Volumn 16, Issue 28-29, 2002, Pages 4353-4362

  Chung, W F ^a   Bromann, K ^a   Altman, M S ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; INDIUM; SILICON; SURFACTANT;

ANISOTROPY; CONFERENCE PAPER; CRYSTALLIZATION; ELECTRON MICROSCOPY; ENERGY; FILM; LOW ENERGY ELECTRON MICROSCOPY; NANOPARTICLE; TEMPERATURE;

EID: 0037146288     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217979202015431     Document Type: Conference Paper

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