Reflection electron microscopy observation of the behavior of monoatomic steps on the silicon surfaces

Surface Review and Letters

Volumn 4, Issue 3, 1997, Pages 551-558

  Aseev, A L ^a   Latyshev, A V ^a   Krasilnikov, A B ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031312440     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X97000535     Document Type: Article

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