Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

Journal of Materials Research

Volumn 13, Issue 7, 1998, Pages 1816-1822

  Kern, R S ^a,b   Rowland, L B ^a,c   Tanaka, S ^a,d   Davis, R F ^a  

^a North Carolina State University   (United States)

^b Hewlett Packard Optoelectronics Div   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

^d INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA ASSISTED GAS SOURCE MOLECULAR BEAM EPITAXY;

SOLID SOLUTIONS;

EID: 0032121603     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1998.0257     Document Type: Article

References (56)

1. G. R. Fisher and P. Barnes, Philos. Mag. B 61, 217 (1990).
2. W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, J. Appl. Phys. 44, 292 (1973).
3. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
4. G. A. Slack, J. Phys. Chem. Solids 34, 321 (1973).
5. L. Zheng, S. Ramalingam, T. Shi, and R. L. Peterson, J. Vac. Sci. Technol. A 11, 2437 (1993).
6. H. Okano, N. Tanaka, K. Shibata, and S. Nakano, Jpn. J. Appl. Phys. 32, 4052 (1993).
7. H. Okano, N. Tanaka, Y. Takahashi, T. Tanaka, K. Shibata, and S. Nakano, Appl. Phys. Lett. 64, 166 (1994).
8. S. K. Tikhonov, N. I. Sushentov, and V. Yu. Rud', Tech. Phys. Lett. 21, 187 (1995).
9. S. Mirsh and H. Reimer, Phys. Status Solidi 11, 631 (1972).
10. J. Bauer, L. Biste, D. Bolze, and G. Eichorn, Phys. Status Solidi 399, 173 (1977).
11. M. Morita, S. Isogai, K. Tsubouchi, and N. Mikoshiba, Appl. Phys. Lett. 38, 50 (1981).
12. M. Morita, K. Tsubouchi, and N. Mikoshiba, Jpn. J. Appl. Phys. 21, 728 (1982).
13. M. Koshinaka, H. Fujii, K. Nakanishi, and Y. Shibuya, Vacuum 41, 1971 (1990).
14. A. U. Ahmed, A. Rys, N. Singh, J. H. Edgar, and Z. J. Yu, J. Electrochem. Soc. 139, 1146 (1992).
15. F. Alexandre, J. M. Masson, G. Post, and A. Scavennec, Thin Solid Films 98, 75 (1982).
16. S. Fujieda, J. Mizuki, and Y. Matsumoto, Jpn. J. Appl. Phys. 27, L296 (1988).
17. S. Fujieda, Y. Mochizuki, K. Akimoto, I. Hirosawa, Y. Matsumoto, and J. Matsui, Jpn. J. Appl. Phys. 29, L364 (1990).
18. Y. Mochizuki, M. Mizuta, S. Fujieda, and Y. Matsumoto, J. Appl. Phys. 67, 2466 (1990).
19. P. Bhattacharya and D. N. Bose, Jpn. J. Appl. Phys. 30, L1750 (1991).
20. S. Fujieda, K. Akimoto, I. Hirosawa, J. Mizuki, Y. Matsumoto, and J. Matsui, Jpn. J. Appl. Phys. 28, L16 (1989).
21. M. O. Aboelfotoh, R. S. Kern, R. F. Davis, and C. I. Harris, unpublished.
22. C. Matignon, Compt. Rend. hu. L'Acad. Sci. 178, 1615 (1924).
23. W. Rafaniello, K. Cho, and A. V. Virkar, J. Mater. Sci. 16, 3479 (1981).
24. W. Rafaniello, M. R. Plichta, and A. V. Virkar, J. Am. Ceram. Soc. 66, 272 (1983).
25. R. Ruh and A. Zangvil, J. Am. Ceram. Soc. 65, 260 (1982).
26. A. Zangvil and R. Ruh, Mater. Sci. Eng. 71, 159 (1985).
27. A. Zangvil and R. Ruh, J. Am. Ceram. Soc. 71, 884 (1988).
28. A. Zangvil and R. Ruh, in Silicon Carbide '87, edited by J. D. Cawley and C. E. Semler (American Ceramic Society, Westerville, OH, 1989), p. 63.
29. S-Y. Kuo, A. V. Virkar, and W. Rafaniello, J. Am. Ceram. Soc. 70, C-125 (1987).
30. S-Y. Kuo and A. V. Virkar, J. Am. Ceram. Soc. 73, 2640 (1990).
31. C. L. Czekaj, M. L. J. Hackney, W. J. Hurley, Jr., L. V. Interrante, G. A. Sigel, P. J. Shields, and G. A. Slack, J. Am. Ceram. Soc. 73, 352 (1990).
32. Sh.A. Nurmagomedov, A. N. Pikhtin, V. N. Razbegaev, G. K. Safaraliev, Yu. M. Tairov, and V. F. Tsvetkov, Sov. Tech. Phys. Lett. 12, 431 (1986).
33. Sh. A. Nurmagomedov, G. K. Safaraliev, N. D. Sorokin, Yu. M. Tairov, and V. F. Tsvetkov, Inorg. Mater. 22, 1464 (1986).
34. Sh.A. Nurmagomedov, A. N. Pikhtin, V. N. Razbegaev, G. K. Safaraliev, Yu. M. Tairov, and V. F. Tsvetkov, Sov. Phys. Semicond. 23, 100 (1989).
35. G. K. Safaraliev, G. K. Sukhanek, Yu.M. Tairov, and V. F. Tsvetkov, Inorg. Mater. 22, 1610 (1986).
36. G. K. Safaraliev, Yu. M. Tairov, and V. F. Tsvetkov, Sov. Phys. Semicond. 25, 865 (1991).
37. G. K. Safaraliev, Yu. M. Tairov, V. F. Tsvetkov, Sh. Sh. Shabanov, E. G. Pashchuk, N. V. Offitserova, D. D. Avrov, and S. A. Sadykov, Semicond. 27, 224 (1993).
38. G. K. Safaraliev and Yu. M. Tairov, in Transactions of the Second International High Temperature Electronics Conference (1994), p. XIV-25.
39. G. K. Safaraliev and Yu. M. Tairov, in Technical Digest of the International Conference on Silicon Carbide and Related Materials 1995 (1995), p. 454.
40. V. A. Dmitriev, L. B. Elfimov, I. Yu. Lin'kov, Ya V. Morozenko, I. P. Nikitina, V. E. Chelnokov, A. E. Cherenkov, and M. A. Chernov, Sov. Tech. Phys. Lett. 17, 214 (1991).
41. V. A. Dmitriev, in Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials, edited by G. L. Harris, M. G. Spencer, and C. Y. Yang (Springer-Verlag, Berlin, 1992), p. 3.
42. V. A. Dmitriev, L. B. Elfimov, I. Yu. Lin'kov, Ya. V. Morozenko, I. P. Nikitina, V. E. Chelnokov, A. E. Cherenkov, and M. A. Chernov, in Amorphous and Crystalline Silicon Carbide IV, edited by C. Y. Yang, M. M. Rahman, and G. L. Harris (Springer-Verlag, Berlin, 1992), p. 101.
43. V. Dmitriev and A. Cherenkov, J. Cryst. Growth 128, 343 (1993).
44. V. A. Dmitriev, Phys. B 185, 440 (1993).
45. V. A. Dmitriev, K. G. Irvine, M. G. Spencer, and I. P. Nikitina, in Silicon Carbide and Related Materials, edited by M. G. Spencer, R. P. Devaty, J. A. Edmond, M. A. Khan, R. Kaplan, and M. Rahman (Institute of Physics, Bristol, 1994), p. 67.
46. I. Jenkins, K. G. Irvine, M. G. Spencer, V. Dmitriev, and N. Chen, J. Cryst. Growth 128, 375 (1993).
47. K. Wongchotigul, M. G. Spencer, N. Chen, and B. D. Prasad, Mater. Lett. 21, 381 (1994).
48. K. Wongchotigul, M. G. Spencer, N. Chen, D. Zhang, K. Fekade, A. Gomez, C. Thomas, V. Dmitriev, and K. Irvine, in Silicon Carbide and Related Materials, edited by M. G. Spencer, R. P. Devaty, J. A. Edmond, M. A. Khan, R. Kaplan, and M. Rahman (Institute of Physics, Bristol, 1994), p. 397.
49. J. H. Edgar, Z. J. Yu, and B. S. Swye, in Silicon Carbide and Related Materials, edited by M. G. Spencer, R. P. Devaty, J. A. Edmond, M. A. Khan, R. Kaplan, and M. Rahman (Institute of Physics, Bristol, 1994), p. 401.
50. J. Edmond, H. Kong, and V. Dmitriev, in Silicon Carbide and Related Materials, edited by M. G. Spencer, R. P. Devaty, J. A. Edmond, M. A. Khan, R. Kaplan, and M. Rahman (Institute of Physics, Bristol, 1994), p. 515.
51. L. B. Rowland, S. Tanaka, R. S. Kern, and R. F. Davis, in Amorphous and Crystalline Silicon Carbide IV, edited by C. Y. Yang, M. M. Rahman, and G. L. Harris (Springer-Verlag, Berlin, 1992), p. 84.
52. R. S. Kern, Ph.D. Thesis, North Carolina State University, Raleigh, NC (1996).
53. A. N. Wright and C. A. Winkler, Active Nitrogen (Academic Press, New York, 1968).
54. R. P. Vaudo, J. W. Cook, Jr., and J. F. Schetzina, J. Vac. Sci. Technol. B 12, 1232 (1994).
55. R. J. Molnar and T. D. Moustakas, J. Appl. Phys. 76, 4587 (1994).
56. A. Zalar, Thin Solid Films 124, 223 (1985).