Band structure effects on the transient electron transport in wurtzite InN

Journal of Crystal Growth

Volumn 246, Issue 3-4, 2002, Pages 320-324

  De Vasconcelos, T F ^a   Maia Jr , F F ^a   Caetano, E W S ^a   Freire, Valder N ^a   Da Costa, J A P ^b   Da Silva Jr , E F ^c  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^c FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

A1. Band anisotropy; A1. Carrier; A1. Effective mass; A1. Overshoot effect; B1. Wurtzite InN; B2. Semiconducting III V materials

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON DRIFT VELOCITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037121697     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01757-8     Document Type: Conference Paper

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