Evaluation of diamond-ground beveled surfaces with Hg gate capacitance-voltage and current-voltage

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 411-414

  Hillard, R J ^a   Sherbondy, J C ^a   Hartford, C L ^a   Weinzierl, S R ^a   Mazur, R G ^a  

^a Solid State Measurements Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001478852     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589822     Document Type: Review

References (19)

1. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).
2. M. Pawlik, J. Vac. Sci. Technol. B 10, 388 (1992).
3. SSM Ultra-Shallow Layer Kit Probe Conditioning Procedure (1996).
4. S. C. Choo, M. S. Leong, and T. S. Tan, Solid-State Electron. 24, 557 (1981).
5. T. Clarysse, P. De Wolf, H. Bender, and W. Vandervorst, Recent Insights in the Physical Modeling of the Spreading Resistance Point Cont, MCNC Conference (1995), p. 29.1.
6. T. Clarysse and W. Vandervorst, J. Vac. Sci. Technol. B 10, 413 (1992).
7. J. Snauwaert, L. Hellemans, I. Czech, T. Clarysse, W. Vandervorst, and M. Pawlik, MCNC, 1993, p. 68.
8. M. Pawlik, J. Vac. Sci. Technol. B 10, 388 (1992).
9. SSM-495 Hg probe system brochure.
10. F1392, ASTM Procedure for Performing Hg Gate Schottky CV (1994).
11. Photo-Flo 20, Eastman Kodak, Rochester, NY 14650.
12. J. A. Copeland, IEEE Trans. Electron Devices ED-17, 404 (1970).
13. Glennel Diamond Compound, Wendt Dunnington Co., Royersford, PA 19468.
14. SAS, Benjamin House, North's Estate, Piddington, High Wycombe, Bucks HP 14 38E, UK.
15. SSM 1996 CV/IV Seminar.
16. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Oxford University Press, New York, 1988).
17. S. Fonash, J. Appl. Phys. 54, 1966 (1983).
18. R. B. Darling, IEEE Trans. Electron Devices 43, 1153 (1996).
19. A. Turut, N. Yalcin, and M. Saglam, Solid-State Electron. 35, 835 (1992).