메뉴 건너뛰기




Volumn 61-62, Issue , 1999, Pages 406-410

Improvements in Pt-based Schottky contacts to 3C-SiC

Author keywords

Multilayer metallisation; Platinum; Schottky contacts; Silicon carbide; TEM; XRD

Indexed keywords

ANNEALING; ELECTRIC CONTACTS; ELECTRIC CURRENT MEASUREMENT; EPITAXIAL GROWTH; METALLIZING; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT; X RAY CRYSTALLOGRAPHY;

EID: 0011203147     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00543-1     Document Type: Article
Times cited : (8)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.