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Volumn 61-62, Issue , 1999, Pages 406-410
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Improvements in Pt-based Schottky contacts to 3C-SiC
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Author keywords
Multilayer metallisation; Platinum; Schottky contacts; Silicon carbide; TEM; XRD
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Indexed keywords
ANNEALING;
ELECTRIC CONTACTS;
ELECTRIC CURRENT MEASUREMENT;
EPITAXIAL GROWTH;
METALLIZING;
PLATINUM;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
THERMODYNAMIC STABILITY;
TRANSMISSION ELECTRON MICROSCOPY;
VOLTAGE MEASUREMENT;
X RAY CRYSTALLOGRAPHY;
SCHOTTKY CONTACTS;
SCHOTTKY BARRIER DIODES;
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EID: 0011203147
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(98)00543-1 Document Type: Article |
Times cited : (8)
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References (14)
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