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Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 5991-6004

Analytical method for finding the general optical properties of semiconductor deep centers

(1) Pan, Janet L a

a YALE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADJUSTABLE PARAMETERS; ANALYTICAL METHOD; BAND GAP ENERGY; BAND-GAP SEMICONDUCTORS; BOUND STATE; CROSS SECTION; DEEP LEVEL; DIRECT-GAP SEMICONDUCTOR; EFFECTIVE MASS; GAAS; INP; LATTICE SITES; LINEAR COMBINATION OF ATOMIC ORBITALS; MATERIALS PARAMETERS; MULTIBAND; OPTICAL DIPOLES; OPTICAL SELECTION RULES; P-MODEL; SPATIAL EXTENT; SPECTRAL SHAPES; SPIN-ORBIT SPLITTINGS; SUBSTITUTIONAL IMPURITIES;

ARSENIC; CHROMIUM; ENERGY GAP; EXPERIMENTS; GALLIUM ARSENIDE; INDIUM ANTIMONIDES; OPTICAL TRANSITIONS; QUANTUM CHEMISTRY; SEMICONDUCTING GALLIUM; SUBSTITUTION REACTIONS; WAVE FUNCTIONS;

ANALYTICAL MODELS;

EID: 0037113079 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1513193 Document Type: Article

Times cited : (4)

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