Antireflection effect of self-organized GaN nanotip structure from ultraviolet to visible region

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 10 B, 2002, Pages

  Yoshida, Harumasa ^a   Terada, Yuusuke ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

Antireflection effect; GaN; Nanotip structure; Reflectance; Rough surface; Transmittance

Indexed keywords

FOURIER TRANSFORMS; FREQUENCIES; LIGHT REFLECTION; LIGHT TRANSMISSION; OPTOELECTRONIC DEVICES; PLASMAS; REACTIVE ION ETCHING; SELF ASSEMBLY; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

ANTIREFLECTION EFFECT; NANOTIP STRUCTURE; TRANSMITTANCE; ULTRAVIOLET TO VISIBLE REGION;

GALLIUM NITRIDE;

EID: 0037110146     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1134     Document Type: Article

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