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Volumn 92, Issue 2, 2002, Pages 987-991
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Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING TEMPERATURES;
CROSS-SECTIONAL STRUCTURES;
DIFFRACTION PEAKS;
DIFFUSION CONSTANT;
FAILURE MECHANISM;
MICROSTRUCTURE EVOLUTIONS;
MIXED STRUCTURE;
SCHOTTKY CONTACTS;
THERMAL-ANNEALING;
TRANSMISSION ELECTRON MICROSCOPY TEM;
XRD MEASUREMENTS;
ACTIVATION ENERGY;
RAPID THERMAL ANNEALING;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
MICROSTRUCTURE;
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EID: 0037100992
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1487439 Document Type: Article |
Times cited : (5)
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References (16)
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