On the multiple negative-differential-resistance (MNDR) InGap/GaAs resonant tunneling bipolar transistors

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1054-1059

  Liu, W C ^a   Pan, H J ^a   Wang, W C ^a   Feng, S C ^a   Lin, K W ^a   Yu, K H ^a   Laih, L W ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

doping sheet; Miniband; Negative differential resistance; RTBT; Superlattice (SL)

Indexed keywords

BAND STRUCTURE; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MATHEMATICAL MODELS; NEGATIVE RESISTANCE; RESONANT TUNNELING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; THRESHOLD VOLTAGE;

MULTIPLE NEGATIVE-DIFFERENTIAL-RESISTANCE (MNDR); RESONANT TUNNELING BIPOLAR TRANSISTORS (RTBT);

BIPOLAR TRANSISTORS;

EID: 0035366293     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925225     Document Type: Article

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