Origin of low-frequency noise in polycrystalline silicon thin-film transistors

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 9919-9923

  Dimitriadis, C A ^a   Farmakis, F V ^a   Kamarinos, G ^b   Brini, J ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE GRAIN SIZE; CARRIER CAPTURE; CARRIER NUMBER FLUCTUATION; CRYSTALLINE SILICONS; CURRENT FLUCTUATIONS; IN-GRAIN DEFECTS; LOW FREQUENCY; LOW-FREQUENCY NOISE; OXIDE TRAPS; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR; POLYSILICON LAYERS; STRUCTURAL PARAMETER;

GRAIN BOUNDARIES; THIN FILM TRANSISTORS;

POLYSILICON;

EID: 0037098089     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481964     Document Type: Article

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