Ferromagnetic III-Mn-V semiconductor multilayers: Manipulation of magnetic properties by proximity effects and interface design (invited)

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 7490-7495

  Furdyna, J K ^a   Liu, X ^a   Sasaki, Y ^a   Potashnik, S J ^b   Schiffer, P ^b  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERRO-MAGNETIC INTERACTIONS; COERCIVE FIELD; GAAS; III-MN-V; INTERFACE DESIGNS; MAGNETIC LAYERS; MN IONS; NONMAGNETIC LAYERS; OVERLAYERS; PROXIMITY EFFECTS; SEMICONDUCTOR MULTILAYERS;

COERCIVE FORCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ARSENIDE; MANGANESE; MULTILAYERS; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 0037094857     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1452643     Document Type: Article

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