Pulsed low-energy ion-assisted growth of epitaxial aluminum nitride layer on 6H-silicon carbide by reactive magnetron sputtering

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3551-3555

  Tungasmita, S ^a   Persson, P O A ^a   Hultman, L ^a   Birch, J ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

6H-SILICON CARBIDES; ALN; ALN FILMS; ALUMINUM NITRIDE LAYER; ALUMINUM NITRIDE THIN FILMS; BENEFICIAL EFFECTS; CARBON IMPURITIES; ELECTRONIC MATERIALS; ENHANCED SURFACE; GROWTH CONDITIONS; HIGH INTENSITY; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; ION ASSISTANCE; ION ASSISTED DEPOSITION; ION INTERACTIONS; ION-ASSISTED GROWTH; LOW ENERGIES; MAGNETRON SPUTTER DEPOSITION; NEAR BAND EDGE EMISSIONS; NEGATIVE BIAS; POSITIVE PULSE; REACTIVE MAGNETRON SPUTTERING; ROCKING CURVES; ULTRAHIGH VACUUM CONDITIONS;

ALUMINUM NITRIDE; EPITAXIAL GROWTH; FILM GROWTH; SILICON CARBIDE; SUBSTRATES; SURFACES; X RAY DIFFRACTION;

IONS;

EID: 0037087268     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448886     Document Type: Article

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