Study of fluorine addition influence in the dielectric constant of diamond-like carbon thin film deposited by reactive sputtering

Modern Physics Letters B

Volumn 16, Issue 15-16, 2002, Pages 577-582

  Trippe, S C ^a   Mansano, R D ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DIAMOND; FLUORINE;

ARTICLE; CONCENTRATION (PARAMETERS); DIELECTRIC CONSTANT; ELECTRICITY; FILM; FLUORINATION; FRICTION; HARDNESS; TENSION;

EID: 0037055253     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217984902004111     Document Type: Article

References (10)

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4. L. Maissel, Application of Sputtering to the Deposition of Films, Handbook of Thin Film Technology, eds. L. I. Maissel and R. Glang (McGraw-Hill Book Company, New York, 1970), Chap. 4.
5. T. W. Mountsier and J. A. Samuels, Thin Solid Films 332, 362 (1998).
6. A. B. Braun, Semiconductor International, 1 June 1998, pp. 127-137.
7. J. Musil, Basic Properties of Low-Pressure Plasmas, in A. Paoletti and A. Tucciarone, The Physics of Diamond (1997), pp. 160-164.
8. A. Vanhulsel, J.-P. Celis, E. Dekempeneer, J. Meneve, J. Smeets and K. Vercammen, Diamond and Related Materials 8, 1193 (1999).
9. H. Touhara and F. Okino, Carbon 38, 241 (2000).
10. W. E. Beadle, J. C. C. Tsai and R. D. Plummer, Quick Reference Manual for Silicon Integrated Circuit Technology (A Wiley-Interscience Publication, 1985), Chap. 1, pp. 1-9.