The effect of gas-phase additives C2H4, C2H6, and C2H2 on SiH4/O2 chemical vapor deposition

Journal of the Electrochemical Society

Volumn 143, Issue 4, 1996, Pages 1355-1361

  Takahashi, T ^a   Hagiwara, K ^a   Egashira, Y ^a   Komiyama, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL METHODS; COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; FLOW OF FLUIDS; HEAT TRANSFER; REACTION KINETICS; SILANES; SILICA; THIN FILMS;

CLEAR FILMS; GAS PHASE ADDITIVES; HOT WALL TUBULAR REACTOR; STEP COVERAGE;

HYDROCARBONS;

EID: 0030126951     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836642     Document Type: Article

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