Excimer-laser crystallization of silicon-carbon films and their thin-film transistor application

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1648-1651

  Choi, Kwangsoo ^a   Uchida, Yasutaka ^b   Matsumura, Masakiyo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b Nishi Tokyo University   (Japan)

Author keywords

Excimer laser crystallization; Liquid crystal display; Silicon carbon; SIPOS film; Thin film transistor

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CARBON; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; EXCIMER LASERS; IRRADIATION; LIQUID CRYSTAL DISPLAYS; THIN FILM TRANSISTORS;

ELECTRON FIELD EFFECT MOBILITY; EXCIMER LASER CRYSTALLIZATION; EXCIMER LASER IRRADIATION; SILICON CARBON FILMS;

SEMICONDUCTING FILMS;

EID: 0030101947     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1648     Document Type: Article

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