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Volumn 417, Issue 6885, 2002, Pages 153-156
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Spin-galvanic effect due to optical spin orientation in N-type GaAs quantum well structures
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
ELECTRIC CONDUCTIVITY;
ELECTRIC CURRENTS;
ELECTRIC FIELDS;
MAGNETIC FIELDS;
SPIN-GALVANIC EFFECTS;
SEMICONDUCTOR MATERIALS;
SEMICONDUCTOR INDUSTRY;
ACCELERATION;
ARTICLE;
CONDUCTANCE;
ELECTRIC CURRENT;
ELECTRIC FIELD;
ELECTRON;
PHYSICS;
PRIORITY JOURNAL;
SEMICONDUCTOR;
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EID: 0037046582
PISSN: 00280836
EISSN: None
Source Type: Journal
DOI: 10.1103/PhysRevB.68.081302 Document Type: Article |
Times cited : (577)
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References (27)
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