Gateable suppression of spin relaxation in semiconductors

Physical Review Letters

Volumn 86, Issue 10, 2001, Pages 2150-2153

  Sandhu, J S ^a   Heberle, A P ^b   Baumberg, J J ^c   Cleaver, J R A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; ELECTRON SCATTERING; EMISSION SPECTROSCOPY; EXCITONS; HELIUM NEON LASERS; HETEROJUNCTIONS; OHMIC CONTACTS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE; ELECTRON LOCALIZATION; NONLOCALIZED ELECTRONIC STATE; SPIN RELAXATION DYNAMICS; SPIN RELAXATION RATE; TWO DIMENSIONAL ELECTRON GAS; ULTRAFAST SPECTROSCOPY;

SOLID STATE PHYSICS;

EID: 0035281242     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.2150     Document Type: Article

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