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Volumn 84, Issue 9, 2000, Pages 1926-1929

Internal Atomic Distortion and Layer Roughness of Epitaxial SiC Thin Films Studied by Short Wavelength X-Ray Diffraction

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0011180948     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.84.1926     Document Type: Article
Times cited : (3)

References (23)
  • 3
    • 85035307265 scopus 로고
    • Properties of Silicon Carbide
    • Gary L. Harris, Institute of Electrical Engineers, United Kingdom
    • Properties of Silicon Carbide, Gary L. Harris, Electronic Materials Information Service (Institute of Electrical Engineers, United Kingdom,1995).
    • (1995) Electronic Materials Information Service


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.