SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 433, Issue , 1999, Pages 900-903

First-principles calculation for misfit dislocations in InAs/GaAs(110) heteroepitaxy

(5) Oyama, Norihisa a Ohta, Eiji a Takeda, Kyozaburo b Shiraishi, Kenji b,c Yamaguchi, Hiroshi c

a KEIO UNIVERSITY (Japan)

b WASEDA UNIVERSITY (Japan)

c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; INTERFACES (MATERIALS); PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

DISLOCATION CORES; FIRST PRINCIPLE CALCULATIONS; INDIUM ARSENIDE;

DISLOCATIONS (CRYSTALS);

EID: 0033329446 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00524-5 Document Type: Article

Times cited : (11)

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