Pseudomorphic InxGa1-xAs/In0.52Al0.48As modulation doped heterostructures grown by LP-MOVPE

Electronics Letters

Volumn 34, Issue 22, 1998, Pages 2173-2174

  Pereira, R G ^a   Yavich, B ^a   Goncalves L C D ^a   Souza, P L ^a   Henriques, A B ^b  

^a Ponticicia Univ Catol do Rio J   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SHUBNIKOV-DE HAAS EFFECT; SUBSTRATES;

HALL MOBILITY; PSEUDOMORPHIC HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0032178396     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981251     Document Type: Article

References (6)

1. 1-xAs/InAlAs/InP heterostructures for high electron mobility transistors applications', IEEE Trans., 1996, ED-43, pp. 1326-1335
2. MISHRA, U., et al.: 'DC and RF performance of 0.1μ gate length AlInAs-InGaAs pseudomorphic HEMTs'. Int. Electron Devices Meeting 1988 Tech. Dig., 1998, pp. 180-183
3. 0.48As modulation-doped heterostructures grown by molecular beam epitaxy', J. Cryst. Growth, 1996, 158, pp. 443-448
4. NAKAYAMA, T., MIYAMOTO, H., OISHI, E., and SAMOTO, N.: 'High electron mobility 18300cm2/V.s in the InAlAs/InGaAs pseudomorphic structure obtained by channel indium composition modulation', J. Electron. Mater., 1996, 25, (4), pp. 555-558
5. 0.48As/InP HEMT's with x = 0.53 to 0.80'. Proc. 8th Int. Conf. InP and Related Materials, Schwäbisch Gmünd, Germany, 1996, pp. 97-100
6. CHIN, A., et al: 'Effects of substrate orientation, pseudomorphic growth and superlattice on alloy scattering in modulation doped InGaAs', J. Cryst. Growth, 1991, 111, pp. 466-469