Effect of pressure on exciton energies of homoepitaxial GaN

Solid State Communications

Volumn 108, Issue 7, 1998, Pages 433-438

  Liu, Z X ^a   Korona, K P ^a,b   Syassen, K ^a   Kuhl, J ^a   Pakula K ^b   Baranowski, J M ^b   Grzegory, I ^c   Porowski, S ^c  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF WARSAW   (Poland)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ENERGY GAP; EPITAXIAL GROWTH; EXCITONS; HYDROSTATIC PRESSURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

EXCITON RESONANCE ENERGIES; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032184129     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00381-0     Document Type: Article

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