The use of deep reactive ion etching in the fabrication of high-efficiency high-resolution crystal X-ray analyzers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4783, Issue , 2002, Pages 131-138

  Shew, B Y ^a   Huang, R S ^b   Wang, D J ^a   Perng, S Y ^a   Kuan, C K ^a   Cai, Y Q ^a   Chow, P ^a   Schwoerer Boehning, M ^c   Caliebe, W ^d   Kao, C C ^d   Chen, C T ^a  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

Deep reactive ion etching; Energy analyzers; Inelastic x ray scattering; Resolution

Indexed keywords

OPTIMIZATION; REACTIVE ION ETCHING; SILICON; X RAY SCATTERING;

DEEP REACTIVE ION ETCHING; ENERGY ANALYZERS; INELASTIC X RAY SCATTERING;

X RAY OPTICS;

EID: 0036980465     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.453816     Document Type: Conference Paper

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