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Volumn 11, Issue 5, 1999, Pages 500-502

Implant-apertured and index-guided vertical-cavity surface-emitting lasers (I2-VCSEL's)

Author keywords

[No Author keywords available]

Indexed keywords

FLIP CHIP DEVICES; ION IMPLANTATION; MIRRORS; OPTICAL DESIGN; PHOTOLITHOGRAPHY;

EID: 0032628086     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.759378     Document Type: Article
Times cited : (35)

References (8)
  • 1
    • 0028764159 scopus 로고
    • Native-oxide defined ring contact for low threshold vertical-cavity lasers
    • D. L. Huffaker, D. G. Deppe, K. Kumar, and T. J. Rogers, "Native-oxide defined ring contact for low threshold vertical-cavity lasers," Appl. Phys. Lett., vol. 65, no. 1, pp. 97-99, 1994.
    • (1994) Appl. Phys. Lett. , vol.65 , Issue.1 , pp. 97-99
    • Huffaker, D.L.1    Deppe, D.G.2    Kumar, K.3    Rogers, T.J.4
  • 2
    • 0031275596 scopus 로고    scopus 로고
    • Vertical-cavity surface emitting lasers: Moving from research to manufacturing
    • Nov.
    • K. D. Choquette and H. Q. Hou, "Vertical-cavity surface emitting lasers: Moving from research to manufacturing," Proc. IEEE, vol. 85, pp. 1730-1739, Nov. 1997.
    • (1997) Proc. IEEE , vol.85 , pp. 1730-1739
    • Choquette, K.D.1    Hou, H.Q.2
  • 3
    • 33749914997 scopus 로고    scopus 로고
    • Vertical-cavity surface-emitting lasers come of age
    • M. Fallahi and S. C. Wang, Chairs/Eds., San Jose, CA, Jan./Feb.
    • R. A. Morgan, J. A. Lehman, and M. K. Hibbs-Brenner, "Vertical-cavity surface-emitting lasers come of age," in Proc. SPIE, M. Fallahi and S. C. Wang, Chairs/Eds., San Jose, CA, Jan./Feb. 1996, vol. 2683, pp. 18-29.
    • (1996) Proc. SPIE , vol.2683 , pp. 18-29
    • Morgan, R.A.1    Lehman, J.A.2    Hibbs-Brenner, M.K.3
  • 4
    • 0000445777 scopus 로고
    • 2 quarter-wave Bragg reflector for the vertical-cavity surface-emitting laser
    • 2 quarter-wave Bragg reflector for the vertical-cavity surface-emitting laser," J. Appl. Phys., vol. 69, no. 11, pp. 7430-7434, 1991.
    • (1991) J. Appl. Phys. , vol.69 , Issue.11 , pp. 7430-7434
    • Lei, C.1    Rogers, T.J.2    Deppe, D.G.3    Streetman, B.G.4
  • 5
    • 0000337870 scopus 로고
    • Ion implantation in III-V semiconductor technology
    • S. J. Pearton, "Ion implantation in III-V semiconductor technology," Int. J. Mod. Phys. B. vol. 7, no. 28, pp. 4687-4761, 1993.
    • (1993) Int. J. Mod. Phys. B. , vol.7 , Issue.28 , pp. 4687-4761
    • Pearton, S.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.