High-performance AlGaN/GaN high electron mobility transistors on SiC

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 456-459

  Kumar, V ^a   Kuliev, A ^a   Schwindt, R ^a   Simin, G ^b   Yang, J ^b   Asif Khan, M ^b   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSCONDUCTANCE;

CONTINUOUS WAVE OUTPUT POWER DENSITY; GATE LENGTH; MAXIMUM DRAIN CURRENT DENSITY; POWER ADDED EFFICIENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036960171     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<456::AID-PSSA456>3.0.CO;2-7     Document Type: Article

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