Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells

Applied Physics Letters

Volumn 73, Issue 22, 1998, Pages 3181-3183

  Cho, Yong Hoon ^a   Song, J J ^a   Keller, S ^b   Mishra, U K ^b   Denbaars, S P ^b  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); LIGHT ABSORPTION; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPY; SPONTANEOUS EMISSION;

EXCITATION ENERGY; RECOMBINATION MECHANISM; YELLOW LUMINESCENCE BAND;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032583025     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122711     Document Type: Article

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