Study of the robust stack cell capacitor structure using double mold oxide (DMO) technology for a gigabit-density DRAM and beyond

Journal of the Korean Physical Society

Volumn 41, Issue 6, 2002, Pages 884-887

  Oh, Jeong Hoon ^a   Jeong, Hoon ^a   Park, J M ^a   Park, J Y ^a   Hong, K H ^a   Choi, Y J ^a   Lee, K H ^a   Chung, T Y ^a   Park, Y J ^a   Kim, Kinam ^a  

^a NONE

Author keywords

Capacitor; DMO(Doulble mold oxide); DRAM; Storage node structure; Thermo mechanical stability

Indexed keywords

EID: 0036951387     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (6)

1. Kinam Kim, Chang-Gyu Hwang and Jong-Gil Lee, IEEE Trans. Electron Dev. 45, 598 (1998).
2. Kinam Kim and Moon-Young Jeong, IEEE Trans. Semiconductor Manufacturing 15, 137 (2002).
3. Daewon Ha, Dongwon Shin, Gwan-Hyeob Koh, Jaegu Lee, Sanghyeon Lee, Yong-Seok Ahn, Hongsik Jeong, Taeyoung Chung and Kinam Kim, IEEE Trans. Electron Dev. 47, 1499 (2000).
4. Byoung Taek Lee, Cha Young Yoo, Han Jin Lira, Chang Seok Kang, Hong Bae Park, Wan Don Kim, Suk Ho Ju, Hideki Horii, Ki Hoon Lee, Hyun Woo Kim, Sang In Lee and Moon Yong Lee, IEDM Tech. Dig, 30.4.1,815 (1998).
5. Hoonsang Choi, Eunhong Kim, In-Hoon Choi, Yongtae Kim, Jaehyoung Choi and Jeongyong Lee, J. Korean Phys. Soc. 39, 179 (2001).
6. Jang-Sik Lee, Jung-Ho Park, Jong-In Yun, Chan-Soo Kim and Senng-Ki Joo, J. Korean Phys. Soc. 39, 184 (2001).