Evolution of sputtered HfO2 thin films upon annealing

Materials Research Society Symposium - Proceedings

Volumn 716, Issue , 2002, Pages 221-226

  Nam, S ^a   Nam, S W ^a   Yoo, J H ^a   Ko, D H ^a   Ku, Ja Hum ^b   Choi, Siyoung ^b  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; DIELECTRIC FILMS; DIFFUSION; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; OXYGEN; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; TEMPERATURE; THIN FILMS;

DC MAGNETRON SPUTTERING; OXYGEN DIFFUSION; SILICON SUBSTRATE;

HAFNIUM COMPOUNDS;

EID: 0036945771     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-716-b4.25     Document Type: Conference Paper

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