Electromigration reliability of Cu interconnects and effects of low k dielectrics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 741-744

  Ho, P S ^a   Lee, K D ^a   Ogawa, E T ^b   Lu, X ^a   Matsuhashi, H ^a   Blaschke, V A ^c   Augur, R ^c  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER; CURRENT DENSITY; FAILURE ANALYSIS; FILM GROWTH; MONTE CARLO METHODS; PHYSICAL VAPOR DEPOSITION; STATISTICAL METHODS;

INTERLEVEL DIELECTRICS (ILD);

ELECTROMIGRATION;

EID: 0036932014     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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4. th Annual, 2001. pp. 341-349.
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